H5PS1G63JFR DDR2 SDRAM内存芯片用户手册

使用该芯片的有：

MYD-SAM9G15 工控板/开发板/核心板

MYD-SAM9G25 工控板/开发板/核心板

MYD-SAM9G35 工控板/开发板/核心板

MYD-SAM9X25 工控板/开发板/核心板

MYD-SAM9X35 工控板/开发板/核心板

MYS-SAM9G15 工控板/单板机

MYS-SAM9G25 工控板/单板机

MYS-SAM9G35 工控板/单板机

MYS-SAM9X25 工控板/单板机

MYS-SAM9X35 工控板/单板机

Features

• VDD = 1.8 +/- 0.1V
• VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• 8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write (centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 84ball FBGA(x16)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Self-Refresh High Temperature Entry
• Average Refresh Cycle (Tcase 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
Commercial Temperature( 0oC ~ 85 oC)
Industrial Temperature( -40oC ~ 95 oC)